Modeling method for gallium-arsenic (GaAs) metal semiconductor field effect transistors (MESFETs)

摘要

A modeling method for a gallium-arsenic metal semiconductor field effect transistor (GaAs MESFET) is disclosed. In order to show satisfactory current-voltage characteristics for the entire region of the drain voltage, the drain current is modeled as being proportional to the hyperbolic-tanh value of the drain voltage, and the small signal model using the drain current modeled as described above. Induce. The device capacitance is modeled by three conditions: pre-pinch-off, transient and post-pinch-off. The device charge amount is modeled using the condition that the charge amount when the gate voltage is 0 and the charge amount at the boundary point must be continuous. Models embedded in existing SPICEs can be easily modified, providing accurate simulators for GaAs MESFETs.