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Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
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机译:具有变化厚度的沟道的金属半导体场效应晶体管(MESFETS)和相关方法
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摘要
A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The unit cell includes a MESFET having a source, a drain and a gate. The gate is between the source and the drain and on a channel layer of the MESFET. The channel layer has a first thickness on a source side of the channel layer and a second thickness, thicker than the first thickness, on a drain side of the channel layer. Related methods of fabricating MESFETs are also provided herein.
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