METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MESFETS) HAVING CHANNELS OF VARYING THICKNESSES AND RELATED METHODS

摘要

A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The unit cell includes a MESFET having a source (13), a drain (17) and a gate (24). The gate is between the source and the drain and on a channel layer (18) of the MESFET. The channel layer has a first thickness on a source side of the channel layer and a second thickness, thicker than the first thickness, on a drain side of the channel layer. Related methods of fabricating MESFETs are also provided herein.