Atomic-Layer-Deposition HfO_2- Based InP n-channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of A1_2O_3 as Interfacial Passivation Layer

摘要

High-k dielectrics and III-V substrates have received a great deal of attention in metal-oxide-semiconductor field effect transistors (MOSFETs) applications for they are the promising candidates to meet the everlasting demands for higher performance and less power dissipation in integrated electronics. However, the high density of interfacial states, due to the absence of an ideal native oxide on III-V compound semiconductor like SiO_2 on Si substrate are the major obstacle for realization of high-K on III-V MOSFETs. While there is an extensive effort improving the high-x/III-V interface quality, e.g., molecular beam epitaxial grown Ga_2O_3 (Gd_2O_3)~(1-3) and atomic layer deposited ALD AI2O3, ZrO_2, HfO_2~(4-9) have shown promising results to provide high quality interfaces.