Small signal nonquasistatic models for GaAs field effect transistors for implementation in SPICE. II. Metal semiconductor field effect transistors (MESFETs)

摘要

For pt.I see ibid., vol.138, no.6, p.735-48 (1991). A nonquasistatic model for GaAs metal semiconductor field effect transistors (MESFETs) is developed. The active distributed transmission line analogy is used to obtain frequency dependent Y-parameter relationships. Implementing the Y-parameters using R, L and C elements, a SPICE-like small signal equivalent circuit is built. This model can be used for the parasitic MESFETs of modulation doped field effect transistors (MODFETs) as well as regular MESFET structures.