Series resistance of silicided ohmic contacts for nanoelectronics

摘要

The electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm. Trench-isolated series resistance test structures were fabricated using TiSi/sub 2/ self-aligned contact technology. Resistance measurements have been performed as a function of contact size in the temperature range from 100 to 300 K and analyzed using multidimensional resistor ladder network models. Well-behaved small-volume ohmic contacts have been achieved. Large-area contact characteristics can be maintained to the smallest sizes. Multidimensional current flow has little effect on the measured resistances. Small lateral dimensional variations are responsible for the higher than predicted series resistance for the smallest sizes. The implications on nanoelectronic devices and circuits are quantified.