Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process

摘要

In the practical thin-film transistor (TFT) SRAM process, the rapid thermal contact annealing (RTA) would seriously deteriorate the subthreshold characteristics of TFTs but it can improve the maximum transconductance. We suggest that these degradations are due to the generation of the deep states and we find these degradations can be recovered by a low-temperature anneal in H/sub 2//N/sub 2/ gas ambient.