Correlation of polysilicon thin-film transistor characteristics to defect states via thermal annealing

摘要

Based on the response of electrical characteristics of hydro-genated polysilicon thin-film transistors (TFTs) to post-hydrogenation thermal annealing, the relationship of device parameters to deep states and tail states are distinguished. The deep states which affect the threshold voltage and subthreshold swing recover quickly, while the tail states which influence the leakage current and field effect mobility respond to the thermal annealing only after annealing temperatures exceeds 375/spl deg/C for 30 min.