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Method for crystallizing amorphous silicon thin-film for use in thin-film transistors and thermal annealing apparatus therefor
Method for crystallizing amorphous silicon thin-film for use in thin-film transistors and thermal annealing apparatus therefor
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机译:用于薄膜晶体管的非晶硅薄膜的晶化方法及其热退火设备
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摘要
A method for crystallizing an amorphous silicon thin-film is provided, in which amorphous silicon thin-films on a large-area glass substrate for use in a TFT-LCD (TFT-Liquid Crystal Display) are crystallized uniformly and quickly by a scanning method using a linear lamp to prevent deforming of the glass substrate. The crystallization method includes the steps of forming an amorphous silicon thin-film on a glass substrate, and illuminating a linear light beam on the amorphous silicon thin-film from the upper portion of the glass substrate according to a scanning method. The crystallization method is applied to a polycrystalline silicon thin-film transistor manufacturing method including the steps of forming an amorphous silicon thin-film on a glass substrate, and crystallizing the amorphous silicon of the thin-film transistor according to a scanning method using a linear light beam. In the scanning illumination of the linear light beam, either one of a supporting member of the glass substrate and a light source is relatively moved by a scanning driver apparatus.
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