Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates

摘要

In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal annealing (CTA). We applied MWA and CTA to a-IGZO TFTs on PI substrate to evaluate the thermal damage to the substrates. While the PI substrate did not suffer thermal damage even at a high power in MWA, it suffered severe damage at high temperatures in CTA. Moreover, a-IGZO TFTs were prepared by MWA at 600 W for 2 min, whereas the same process using CTA required 30 min at a temperature of 300 °C, which is a maximum process condition in CTA without thermal damage to the PI substrate. Hence, MWA TFTs have superior electrical performance when compared to CTA TFTs, because traps/defects are effectively eliminated. Through instability evaluation, it was found that MWA TFTs were more stable than CTA TFTs against gate bias stress at various temperatures. Moreover, an MWA TFT-constructed resistive load inverter exhibited better static and dynamic characteristics than the CTA TFT-constructed one. Therefore, MWA is a promising thermal process with efficient energy conversion that allows the fabrication of high-performance electronic devices.