Thermal Annealing Effect on Amorphous Silicon Thin-Film Transistors Fabricated on a Flexible Stainless Steel Substrate

摘要

Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) were fabricated on a stainless steel substrate at 150 deg C. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at 230 deg C after fabrication. The field-effect mobility was reduced to 71 percent of the initial value because of the strain of the released hydrogen atoms and residual compressive stress in a-Si:H TFT under thermal annealing at 230 deg C. As chromium was evaporated on the back side of flexible a-Si:H TFTs to compensate thermal stress under thermal annealing at 230 deg C the mobility recovered 84 percent of the initial value.