Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

摘要

We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10~3, and a field-effect mobility of 18 cm~2/Vs.