Simulation of semiconductor devices with non-ideal metallic contacts

摘要

A comprehensive model of metal-semiconductor contacts that includes both thermionic emission and tunneling effects is reported. The model is particularly suited for the simulation of power devices. As an application example, simulation results of a hybrid Schottky-/pn-diode, also known as Junction Barrier Controlled Schottky Diode (JBS) or Merged pn-Schottky Diode (MPS), are presented.