Current flow by metallic shunts in alloyed ohmic contacts to wide-gap semiconductors

T V Blank; Yu A Goldberg

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Current flow by metallic shunts in alloyed ohmic contacts to wide-gap semiconductors

机译：合金欧姆触点中的金属分流器流向宽隙半导体的电流

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A mechanism of current flow across alloyed ohmic contacts in lightly doped wide-gap A~3B~5 semiconductors has been investigated experimentally. Changes in the current-voltage and capacity-voltage characteristics of semiconductor-metal structures have been

机译：实验研究了电流流过轻掺杂宽禁带A〜3B〜5半导体中的合金欧姆接触的机理。半导体金属结构的电流-电压和容量-电压特性已经发生了变化。

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《Semiconductor science and technology》 |2008年第4期|p.137-142|共6页
作者
T V Blank; Yu A Goldberg;
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作者单位

A F Ioffe Physical-Technical Institute of Russian Academy of Science, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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入库时间 2022-08-18 01:32:16

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机译：电流沿着欧姆接触中的金属分流器流向宽间隙III-V半导体
2. Ohmic Contacts to p-ZnSe and p-GaN Wide-Gap Semiconductors [J] . Yasuo Koide, Masanori Murakami Electronics & Communications in Japan. 2 . 1999,第10期

机译：与p-ZnSe和p-GaN宽间隙半导体的欧姆接触
3. Current Flow through Metal Shunts in Ohmic Contacts to n~+-Si [J] . A. V. Sachenko, A. E. Belyaev, V. A. Pilipenko, Semiconductors . 2014,第4期

机译：电流通过欧姆接触中的金属分流器流向n〜+ -Si
4. A New Mechanism of Contact Resistance Formation in Ohmic Contacts to Semiconductors with High Dislocation Density [C] . A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, ICPS 2012 . 2013

机译：具有高脱位密度的欧姆触点接触电阻形成的新机制
5. Ohmic contacts to N-type gallium nitride based semiconductors. [D] . Selvanathan, Deepak. 2004

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6. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance [O] . Hsun-Ming Chang, Adam Charnas, Yu-Ming Lin, -1

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8. Survey of ohmic contacts to III-V compound semiconductors [R] . Baca, A. G. , Zolper, J. C. , Briggs, R. D. , 1997

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Current flow by metallic shunts in alloyed ohmic contacts to wide-gap semiconductors

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