Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

摘要

We have proposed a single metal/dual high-$k$ gate stack for aggressively scaled complementary metal–insulator–semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high-$k$ dielectrics, such as MgO- and $hbox{Al}_{2}hbox{O}_{3}$ -containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which will suppress the variation in device performance. Based on this device concept, we have actually fabricated W/TiN/HfMgSiON n-type MISFETs and W/TiN/HfAlSiO p-type MISFETs and have successfully demonstrated a low threshold voltage operation for both of n- and p-type MISFETs.