Single Metal/Dual High-k Gate Stack with Low V{sub}(th) and Precise Gate Profile Control for Highly Manufacturable Aggressively Scaled CMISFETs

摘要

We have proposed a single metal/dual high-k (SMDH), low-V{sub}(th) gate stack for aggressively scaled CMISFETs. The V{sub}(th) is controlled by MgO- and Al{sub}2O{sub}3-containing high-k for n and pMISFETs, respectively. The gate profile can be more easily controlled by taking advantage of a common W/TiN gate stack on both high-k's. We have successfully obtained 0.21 and -0.33 V of V{sub}(th) for a 1-μm long n and pMISFET by the proposed SMDH gate stacks. We also found that MgO suppresses PBTI and that it enhances electron mobility.