High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

摘要

Thin-film transistors (TFTs) based on indium–gallium–zinc oxide (IGZO) active layer and anodic aluminum oxide $(hbox{Al}_{2}hbox{O}_{3})$ gate dielectric were investigated. The anodic $hbox{Al}_{2}hbox{O}_{3}$ gate dielectric possesses low leakage current and relatively high dielectric constant. The IGZO TFT based on anodic $hbox{Al}_{2}hbox{O}_{3}$ shows a mobility of as high as 21.6 $hbox{cm}^{2}/hbox{V}cdothbox{s}$, an on/off current ratio of as high as $hbox{10}^{8}$, and a threshold voltage of only 2 V. Further studies show that the anodic $hbox{Al}_{2}hbox{O}_{3}$ gate dielectric is very compatible with the IGZO semiconductor, and both the channel resistance and contact resistance are lower than those of the TFTs based on thermally grown $ hbox{SiO}_{2}$ gate dielectric.