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Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

机译：溶液沉积大气压形成的具有铟镓锌氧化物通道和氧化铝栅介质叠层的薄膜晶体管的电性能

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Furuta Mamoru; Kawaharamura Toshiyuki; Wang Depang; Toda Tatsuya; Hirao Takashi;
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年度 2012
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1. Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition [J] . Furuta M. Electron Device Letters, IEEE . 2012,第6期

机译：通过基于溶液的大气压沉积形成的具有铟镓锌氧化物通道和氧化铝栅介质叠层的薄膜晶体管的电性能
2. Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique [J] . Wu Chien-Hung, Chang Kow-Ming, Chen Yi-Ming, Journal of nanoscience and nanotechnology . 2018,第3期

机译：采用KRF ELA改进栅极堆叠的LAALO3 / ZRO2铟镓锌氧化物薄膜晶体管，具有新颖的大气压等离子体增强的化学气相沉积技术
3. Solution-Based Indium Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide [J] . Jeon Woojin, Choi Pyungho, Park Areum, Journal of nanoscience and nanotechnology . 2020,第11期

机译：基于溶液的氧化铟锌/铟 - 镓 - 氧化锌双通道薄膜晶体管，其具有掺入的过氧化氢
4. Analysis Of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Bi-layer Gate Dielectric Stacks Using Maxwell-Wagner Instability Model [C] . A. Kiani, B. C. Bayer, D. G. Hasko, Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics . 2017

机译：使用Maxwell-Wagner不稳定模型分析双层栅极电介质叠层的非晶铟 - 镓 - 氧化锌薄膜晶体管
5. Fabrication and characterization of zinc oxide light-emitting diodes, indium zinc oxide thin-film transistors, and aluminum gallium nitride/gallium nitride high electron mobility transistor-based biosensors. [D] . Wang, Yu-Lin. 2009

机译：氧化锌发光二极管，氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
6. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment [O] . Ching-Lin Fan, Fan-Ping Tseng, Chiao-Yuan Tseng 2018

机译：CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
7. Origin of performance improvement in solution-processed indium–gallium–zinc-oxide thin-film transistors having thin active layer and asymmetric dual gate structure [O] . Jeongmin Kim, Jaewook Jeong 2020

机译：溶液加工铟 - 镓 - 氧化锌薄膜晶体管具有薄的有源层和不对称双栅极结构的性能改进起源

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

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