INDIUM, GALLIUM, ZINC, OXIDE TARGET MANUFACTURING METHOD AND AN INDIUM, GALLIUM, ZINC, OXIDE TARGET THEREBY, CAPABLE OF MANUFACTURING SINGLE TARGET WHICH IS NOT SEPARATED

摘要

PURPOSE: An IGZO(Indium, Gallium, Zinc, Oxide) target manufacturing method and an IGZO target thereby are provided to maximize the time for using a target by including a smaller generation of the nozzle in comparison to the target in which In-Zn-O composition and ZnGa2O4 composition are separated by generating InGaZnO4 single phase.;CONSTITUTION: An IGZO target manufacturing method comprises a process(S110) of dispersing after mixing Indium oxide powder, gallium oxide powder, and zinc oxide powder with dispersant; and a process(S120) of sintering after manufacturing green compact by mixing the dispersed indium oxide powder, the dispersed gallium oxide powder, and the dispersed zinc oxide powder. A dispersion process comprises a first dispersion step preparing indium oxide by mixing the indium oxide powder and a first dispersant; a second dispersion step preparing gallium oxide dispersed liquid by mixing the gallium oxide powder and a second dispersant; a third dispersion step preparing zinc oxide dispersed liquid by mixing the zinc oxide powder and a third dispersant. Dispersion is implemented with wet milling. The first dispersant adds polyacrylic acid amine salt of 500 molecular weight in comparison with indium oxide powder 100 parts by weight in order to be 1.0 parts by weight.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Start; (BB) End; (S110) Dispersion process; (S120) Sintering process