A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver

摘要

A very compact one-time-programmable memory consisting of an oxide antifuse and a polysilicon diode driver is proposed in this brief. The memory cell is constructed using a standard CMOS process without any additional masks to reduce the fabrication cost. The design method to achieve the required performance of various components is presented in detail. The technology has been demonstrated with a fabricated chip from a standard 0.18- $muhbox{m}$ CMOS TSMC technology.