CMOS compatible planar integration of compact semiconductor laser diodes with waveguides on silicon

摘要

We report planar, coaxial integration of edge-emitting InGaAs/InP laser diodes with silicon oxy-nitride (SiON) waveguides on silicon substrates using a modular recess-integration technique compatible with integration on full CMOS wafers after conventional front- and back-end processing has been completed [1]. The technique results in a small device footprint and can be used to integrate multiple types of devices on a single wafer. We feel it is superior to other optoelectronic integration techniques; more broadly, it is ideally suited to realizing robust, planar, monolithically integrated micro-systems incorporating a variety of materials and devices.