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STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES

机译：硅（111）基质上的Algan / gan和Inaln / GAN二极管和高迁移率晶体管的CMOS相容氧化钌肖特基接触的研究

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LWIN MIN KYAW;
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年度 2015
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1. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
2. High voltage AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with regrown In_(0.14)Ga_(0.86)N contact using a CMOS compatible gold-free process [J] . Xinke Liu, Maruf Amin Bhuiyan, Pannirselvam S/O Somasuntharam, _Applied Physics Express . 2014,第12期

机译：In_（0.14）Ga_（0.86）N触点再生长的高压AlGaN / GaN金属氧化物半导体高电子迁移率晶体管，采用兼容CMOS的无金工艺
3. 1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material [J] . Liu Xinke, Liu Qiang, Li Chao, Japanese journal of applied physics . 2017,第2期

机译：使用兼容CMOS的接触材料在独立式GaN晶片上的1.2 kV GaN肖特基势垒二极管
4. Performance Improvement using Diluted KOH Passivation on Recessed-gate AlGaN/GaN Metal-oxide-semiconductor High-electron-mobility Transistors Grown on 8-inch Silicon (111) Substrates [C] . Yi-Hong Jiang, Li-Cheng Chang, Kai-Chieh Hsu, International Conference on Compound Semiconductor Manufacturing Technology . 2017

机译：在8英寸硅（111）基板上生长的凹陷 - 栅极AlGaN / GaN金属氧化物半导体高电子迁移率晶体管的稀释KOH钝化性能改进
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations [O] . H.-P. Lee, J. Perozek, L. D. Rosario, -1

机译：使用不同缓冲层配置的200mm硅（111）衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
7. Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks [O] . Floros, Konstantinos, Li, Xu, Guiney, Ivor, 2017

机译：双势垒InalN / alGaN / GaN-on-silicon高电子迁移率晶体管，具有基于pt和Ni的栅极堆叠
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES

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