机译:可变漂移区宽度SOI LDMOS器件的分析模型与优化
Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;
College of Information and Communication Engineering, Harbin Engineering University, Harbin, China;
College of Information and Communication Engineering, Harbin Engineering University, Harbin, China;
College of Information and Communication Engineering, Harbin Engineering University, Harbin, China;
Silicon; Silicon-on-insulator; Analytical models; Permittivity; Electric potential; Performance evaluation; Semiconductor process modeling;
机译:利用阶跃掺杂漂移区优化SOI LDMOS的新分析模型
机译:高压LDMOS器件漂移区的准二维紧凑型电阻器模型
机译:上漂移区双步局部SOI LDMOSFET:一种提高击穿电压和输出特性的新型器件
机译:步进漂移LDMOSFET:一种用于先进智能电源技术的新型漂移区工程器件
机译:利用数字高程模型,洪水高度数据,数字土壤数据和国家湿地清单对可变宽度河岸带进行建模和分类:河岸带划分的新方法。
机译:基于模型优化方法的地表模型和粒子群算法在半干旱地区改善土壤水分模拟
机译:采用有效基板电压法用任意漂移掺杂谱的SOI LDMOS的分析击穿模型