DRIFT REGION FIELD CONTROL OF LDMOS TRANSISTOR USING BIASED LONGITUDINAL DIRECTION FIELD PLATE, LDMOS TRANSISTOR, AND METHOD OF MANUFACTURING LDMOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling the electric field profile in the drift region of a LDMOS device by using a RESURF region.SOLUTION: A first RESURF region 64 extends from the source 18 end of a LDMOS device 10 toward the drain 22 end, adjacent to the drift region 52, and forms a metallurgical bond 62 with the drift region. A second RESURF layer 66 extends from the drain 22 end of the LDMOS device 10 toward the source 18 end, and has a terminal 74 between a body contact 42 and the source end of the first RESURF layer in the longitudinal direction. The distance between the end of the second RESURF layer and body contact is larger than the vertical distance between the end of the second RESURF layer and body contact.EFFECT: Maximum electric field between the second RESURF layer and body contact is reduced advantageously by using this shape.SELECTED DRAWING: Figure 1