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Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices & ICs

召开年：2015
召开地：Hong Kong(CN)
出版时间：-

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1.6-in-1 Silicon carbide power module for high performance of power electronics systems

机译：6合1碳化硅电源模块，用于高性能的电力电子系统
- 作者：Ishino Hiroshi;Watanabe Tomokazu;Sugiura Kazuhiko;Tsuruta Kazuhiro
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2014年
- Cooling;
- Heating;
- Inductance;
- Inverters;
- Multichip modules;
- Silicon;
- Silicon carbide;
2.A GaN pulse width modulation integrated circuit

机译：GaN脉冲宽度调制集成电路
- 作者：Wang Hanxing;Ho Alex Man Kwan;Jiang Qimeng;Chen Kevin J
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2014年
- Capacitors;
- Gallium nitride;
- Generators;
- HEMTs;
- MODFETs;
- Pulse width modulation;
- Temperature measurement;
3.Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments

机译：通过表面处理改善了200mm Si晶片上的无AU-AlGaN / GaN肖特基二极管的动态特性
- 作者：Lenci Silvia;Hu Jie;Van Hove Marleen;Ronchi Nicolo;Decoutere Stefaan
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2014年
- Aluminum gallium nitride;
- Anodes;
- Gallium nitride;
- Plasmas;
- Surface cleaning;
4.4 A/cm2, 7kV normally-off diamond-emitter vacuum switch

机译：4 A / CM ^{2 ，7kV常关金刚石 - 发射器真空开关}
- 作者：Takeuchi D.;Kawashima H.;Kuwabara D.;Makino T.;Kato H.;Ogura M.;Ohashi H.;Okushi H.;Yamasaki S.;Koizumi S.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
5.Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices

机译：NLDMOS器件中热载波降解的预测和高效建模
- 作者：Sharma Prateek;Tyaginov Stanislav;Wimmer Yannick;Rudolf Florian;Rupp Karl;Bina Markus;Enichlmair Hubert;Jong-Mun Park;Ceric Hajdin;Grasser Tibor
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- drift-diffusion scheme;
- hot-carrier degradation;
- nLDMOS;
- spherical harmonics expansion;
6.The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

机译：栅极介电质量在200mm Si衬底上显影Au-Free的D-Mode和E模式凹陷栅极/ GaN晶体管的影响
- 作者：Tian-Li Wu;Marcon Denis;De Jaeger Brice;Van Hove Marleen;Bakeroot Benoit;Lin Dennis;Stoffels Steve;Xuanwu Kang;Roelofs Robin;Groeseneken Guido;Decoutere Stefaan
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- AlGaN/GaN;
- PE-ALD SiN;
- border traps;
- depletion mode;
- enhacement mode;
- gate dielectric;
- interface states;
- recessed gate;
7.A RESURF P-N bimodal LDMOS suitable for high voltage power switching applications

机译：适用于高压电源开关应用的Resurf P-N双极LDMOS
- 作者：Yongxi Zhang;Pendharkar Sameer;Hower Phil;Giombanco Salvatore;Amoroso Antonio;Marino Filippo
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- LDMOS;
- RESURF;
- bimodal conduction;
- high voltage;
- power switching;
8.Accelerated resistance degradation in aluminum by pulsed power cycling

机译：脉冲功率循环加速耐铝的抗性降解
- 作者：Ferrara A.;Claes J.;Swanenberg M.;van Dijk L.;Steeneken P.G.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
9.High voltage thick SOI-LIGBT with high current density and latch-up immunity

机译：高压厚SOI-LIGBT，具有高电流密度和闩锁免疫力
- 作者：Jing Zhu;Weifeng Sun;Long Zhang;Yicheng Du;Hui Yu;Keqin Huang;Yan Gu;Sen Zhang;Wei Su
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- SOI-LIGBT;
- U-shaped channel;
- current density;
- high voltage;
- latch-up immunity;
10.Temperature dependence of single-event burnout for super junction MOSFET

机译：超级交叉机MOSFET的单事件倦怠温度依赖性
- 作者：Katoh Shunsuke;Shimada Eiji;Yoshihira Takayuki;Oyama Akihiro;Ono Syotaro;Ura Hideyuki;Ookura Gentaro;Saito Wataru;Kawaguchi Yusuke
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
11.Demonstration of a HV BCD technology with LV CMOS process

机译：带LV CMOS过程的HV BCD技术的演示
- 作者：Tsung-Yi Huang;Chien-Hao Huang;Chih-Fang Huang;Ching-Yao Yang;Yeh Wang-Chi Vincent;Huang-Ping Chu;Chien-Wei Chiu;Kuo-Hsuan Lo;Hung-Der Su;Jing-Meng Liu;Jeng Gong
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
12.Multi-dimensional trade-off considerations of the 750V micro pattern trench IGBT for electric drive train applications

机译：电动传动系应用750V微图案沟槽IGBT的多维折衷考虑因素
- 作者：Wolter Frank;Roesner Wolfgang;Cotorogea Maria;Geinzer Thomas;Seider-Schmidt Martina;Kae-Horng Wang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
13.Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

机译：使用纯湿法蚀刻技术增强 - 模型GaN-On-Silicon MOS-HEMT
- 作者：Cen Tang;Gang Xie;Kuang Sheng
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- MOS-HEMT;
- gallium nitride;
- high breakdown voltage;
- normally-off;
- wet etch;
14.Development of power semiconductors by quantitative nanoscale dopant imaging

机译：通过定量纳米级掺杂剂成像开发功率半导体
- 作者：Bartolf H.;Gysin U.;Rossmann H.R.;Bubendorf A.;Glatzel T.;Jung T.A.;Meyer E.;Zimmermann M.;Reshanov S.;Schoner A.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Dopant Imaging;
- JBS Rectifier;
- KPFM;
- SCFM;
- SEM;
- SSRM;
- Schottky Diode;
- Silicon Carbide;
- Space-Charge Region;
- Super-Junction Architecture;
- p/n-Junction;
15.The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs

机译：收集器接触设计对800V外侧IGBT的功率IC的性能和产量的影响
- 作者：Camuso G.;Udrea F.;Udugampola N.;Pathirana V.;Trajkovic T.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Collector Contact;
- Injection efficiency;
- Lateral IGBT;
- Uniformity;
- Yield;
16.An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT)

机译：4.5 kV“双模门换向晶闸管”（BGCT）的实验演示
- 作者：Vemulapati Umamaheswara;Arnold Martin;Rahimo Munaf;Vobecky Jan;Stiasny Thomas;Lophitis Neophytos;Udrea Florin
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- BGCT;
- Bi-mode GCT;
- High power semiconductor switch;
- IGCT;
- Reverse Conducting IGCT;
17.Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs

机译：对P沟道电源U-MOSFET中NBTI负责的空间和能量氧化物陷阱分布
- 作者：Tallarico Andrea N.;Sangiorgi Enrico;Fiegna Claudio;Magnone Paolo;Barletta Giacomo;Magri Angelo
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
18.Series-connection of SiC normally-on JFETs

机译：SIC常用于JFETS的系列连接
- 作者：Xueqing Li;Bhalla Anup;Alexandrov Petre;Hostetler John;Fursin Leonid
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Cascode;
- JFETs;
- Normally-on;
- Series Connection;
- Silicon Carbide;
19.A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC

机译：用于提高高压栅极驱动IC的抗噪性的电容式电平换档电路
- 作者：Yunwu Zhang;Jing Zhu;Weifeng Sun;Yangyang Lu;Lihui Gu;Sen Zhang;Wei Su
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- gate driver;
- high voltage;
- level shifter;
- noise immunity;
20.Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

机译：背面潜力对甘SBDS和HEMTS当前崩溃的影响
- 作者：Croon J.A.;Hurkx G.A.M.;Donkers J.J.T.M.;Sonsky J.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Charge Trapping;
- Current Collapse;
- GaN;
- HEMT;
- Packaging;
- SBD;
21.Predictive half-cell simulations of filament formation during IGBT turn-off

机译：IGBT关闭期间长丝形成的预测半细胞模拟
- 作者：Sandow C.;Baburske R.;van Treek V.;Niedernostheide F.-J.;Felsl H.-P.;Cotorogea M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
22.GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

机译：基于GaN的单片电源集成电路技术，偏振接线平台宽工作温度
- 作者：Nakajima Akira;Nishizawa Shin-ichi;Ohashi Hiromichi;Kayanuma Rei;Tsutsui Kazuo;Kubota Shunsuke;Kakushima Kuniyuki;Wakabayashi Hitoshi;Iwai Hiroshi
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- GaN;
- N-channel component;
- P-channel;
- polarization junction;
- power IC;
23.Integrated reverse-diodes for GaN-HEMT structures

机译：用于GaN-HEMT结构的集成反向二极管
- 作者：Reiner Richard;Waltereit Patrick;Weiss Beatrix;Wespel Matthias;Quay Rudiger;Schlechtweg Michael;Mikulla Michael;Ambacher Oliver
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- HFET;
- body-diode;
- free-wheeling;
- reverse-diode;
24.Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels

机译：高偏差水平加速温度湿度偏置（THB）测试IGBT模块
- 作者：Zorn Christian;Kaminski Nando
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- IGBT module;
- THB;
- accelerated testing;
- bias influence;
- corrosion;
- dendrites;
- humidity degradation;
- metallization;
25.Latest results on 1200 V 4H-SiC CIMOSFETs with Rsp, on of 3.9 mΩ·cm2 at 150°C

机译：最新成果在1200 V 4H-SIC CIMOSFET上，带有R SP，在150°C的3.9mΩ·cm 2 的上
- 作者：Zhang Qingchun Jon;Gangyao Wang;Doan Huy;Sei-Hyung Ryu;Hull Brett;Young Jonathan;Allen Scott;Palmour John
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
26.The optimised design and characterization of 1200 V / 2.0 m? cm2 4H-SiC V-groove trench MOSFETs

机译：优化的设计和表征为1200 V / 2.0 m？ CM ^{2 4H-SIC V沟槽沟沟MOSFET}
- 作者：Uchida Kosuke;Saitoh Yu.;Hiyoshi Toru;Masuda Takeyoshi;Wada Keiji;Tamaso Hideto;Hatayama Tomoaki;Hiratsuka Kenji;Tsuno Takashi;Furumai Masaki;Mikamura Yasuki
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
27.Substrate coupling in fast-switching integrated power stages

机译：快速切换集成电源级中的基板耦合
- 作者：Wittmann Juergen;Rindfleisch Christoph;Wicht Bernhard
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
28.High voltage Si/SiC hybrid switch: An ideal next step for SiC

机译：高压SI / SIC混合开关：SIC的理想下一步
- 作者：Xiaoqing Song;Huang Alex Q.;Meng-Chia Lee;Chang Peng
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- IGBT;
- JFET;
- MOSFET;
- Silicon carbide;
- hybrid switch;
- turn-off loss;
29.Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates

机译：4H-SiC P-I-N二极管对轻掺杂独立基板的特性
- 作者：Chowdhury S.;Hitchcock C.;Dahal R.;Bhat I.B.;Chow T.P.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- P-i-n diodes;
- Silicon Carbide (4H-SiC);
- freestanding substrate;
30.Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

机译：外延和栅极沉积过程对AlGaN / Gan-On-Si-Si Hemt ron抗性的影响
- 作者：Lehmann J.;Leroux C.;Charles M.;Torres A.;Morvan E.;Reimbold G.;Bano E.;Ghibaudo G.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- AlGaN/GaN HeMT;
- Ron;
- epitaxy;
- fluorine;
- power transistors;
31.A novel 3D transformer for ultra-compact signal isolation

机译：用于超紧凑信号隔离的新型3D变压器
- 作者：Rongxiang Wu;Niteng Liao;Xiangming Fang;Sin Johnny K. O.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 3D integration;
- isolation technology;
- micro-transformer;
- signal transfer;
32.On-chip optical pumping of deep traps in AlGaN/GaN-on-Si power HEMTs

机译：Algan / Gan-On-Si功率Hemts中深陷阱的片上光学泵浦
- 作者：Xi Tang;Baikui Li;Chen Kevin J.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- AlGaN/GaN high electron mobility transistor (HEMT);
- On-chip light illumination;
- Optical pumping;
- Trap;
33.A breakthrough concept of HVICs for high negative surge immunity

机译：高负浪涌免疫力的HVICS突破性概念
- 作者：Jonishi Akihiro;Akahane Masashi;Yamaji Masaharu;Kanno Hiroshi;Tanaka Takahide;Tochinai Noriyuki;Sumida Hitoshi
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
34.Fully integrated SOI gate driver for control of 1200V IGBT switches in three-level-NPC topology

机译：完全集成的SOI门驱动器，用于控制三级NPC拓扑中的1200V IGBT开关
- 作者：Vogler Bastian;Herzer Reinhard;Buetow Sven
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Gate Driver;
- HVIC;
- IGBT;
- NPC;
- SOI;
- Three-Level;
35.A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies

机译：具有1200V / 50A的系列并联混合连接的10kV / 200A SIC MOSFET模块
- 作者：Qiang Xiao;Yang Yan;Xinke Wu;Na Ren;Kuang Sheng
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- SiC MOSFET;
- high power module;
- innovative series-parallel circuit;
36.A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime

机译：具有阳极区分段沟槽的高电流密度SOI-LIGBT，用于抑制负差分抗性状态
- 作者：Long Zhang;Jing Zhu;Weifeng Sun;Yicheng Du;Hui Yu;Keqin Huang;Longxing Shi
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- NDR regime;
- SOI-LIGBT;
- current density;
- segmented trenches;
- snapback voltage;
37.Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions

机译：基于Si HEMT崩溃的数值研究底物和包装相互作用算法
- 作者：Monti F.;Imperiale I.;Reggiani S.;Gnani E.;Gnudi A.;Baccarani G.;Nguyen L.;Hernandez-Luna A.;Huckabee J.;Tipirneni N.;Denison M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- GaN-on-Si HEMTs;
- TCAD modeling;
- charge creep;
- packaging material;
38.Application of power electronic devices in rail transportation traction system

机译：电力电子器件在轨道运输牵引系统中的应用
- 作者：Jiaxi Hu;Wenye Liu;Jinfeng Yang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- IPM;
- drive control;
- power electronic devices;
- traction converter;
39.Fully-isolated NLDMOS behavior investigation during reverse recovery of parasitic diodes

机译：寄生二极管反向恢复期间的完全隔离的NLDMOS行为调查
- 作者：Nan-Ying Yang;Ming-Cheng Lin;Haw-Yun Wu;Wu C.B.;Chu L.;Lu H.T.;Lee C.Y.;Jong Y.C.;Tsai J.L.;Tuan H.C.;Kalnitsky Alex
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- fully-isolated NLDMOS;
- reverse recovery charge;
40.Automatic layout optimization of DMOS transistors for lower peak temperatures and increased energy capability

机译：DMOS晶体管的自动布局优化，用于降低峰值温度和增加的能量能力
- 作者：Zawischka Timo;Pfost Martin
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
41.A novel ultra-low loss four inch thyristor for UHVDC

机译：用于UHVDC的新型超低损耗四英寸晶闸管
- 作者：Vobecky J.;Botan V.;Stiegler K.;Meier U.;Bellini M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- HVDC transmission;
- Junction termination;
- Silicon devices;
- Thyristors;
42.Trends and opportunities in intelligent power modules (IPM)

机译：智能电源模块（IPM）的趋势和机遇
- 作者：Otsuki Masahito;Watanabe Manabu;Nishiura Akira
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
43.A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars

机译：AlGaN / GaN Powerbars精确热分析的建模与实验方法
- 作者：Sodan Vice;Stoffels Steve;Oprins Herman;Baelmans Martine;Decoutere Stefaan;De Wolf Ingrid
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
44.Ultra low miller capacitance trench-gate IGBT with the split gate structure

机译：超低米勒电容沟槽栅极IGBT采用分裂栅极结构
- 作者：Ohi K.;Ikura Y.;Yoshimoto A.;Sugimura K.;Onozawa Y.;Takahashi H.;Otsuki M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- FWD reverse recovery dV/dt;
- Miller capacitance;
- Split gate;
- Trench-gate IGBT;
45.1.7kV high-power IGBT fabrication by bonded-wafer-concept

机译：1.7kV高功率IGBT通过粘合 - 晶圆概念制造
- 作者：Matthias Sven;Janisch Wolfgang;Papadopoulos Charalampos;Kopta Arnost
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- IGBT;
- anode;
- bonded wafer;
- buffer;
- silicon;
- thin wafer;
46.Fully-isolated silicon RF LDMOS for high-efficiency mobile power conversion and RF amplification

机译：用于高效移动电源转换和RF放大的完全隔离的硅RF LDMOS
- 作者：Zierak Michael;Feilchenfeld Natalie;Chaojiang Li;Letavic Ted
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 802.11n;
- DC-DC;
- FEM;
- PAE;
- RF LDMOS;
- power amplifier;
47.Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

机译：重复透明电感切换应力下1.2KV 4H-SIC MOSFET降解和优化的调查
- 作者：Siyang Liu;Weifeng Sun;Qinsong Qian;Chunde Gu;Yu Huang;Song Bai;Gang Chen;Runhua Huang;Yonghong Tao;Ao Liu
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 4H-SiC MOSFET;
- Degradation;
- Optimization;
- Repetitive UIS;
48.A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness

机译：一种新型沟槽屏蔽MOSFET，带埋地磁圈，可调谐开关和改进的坚固性
- 作者：Lingpeng Guan;Bobde Madhur;Padmanabhan Karthik;Yilmaz Hamza;Bhalla Anup;Lei Zhang;Chiu Allan;Jongoh Kim;Wenjun Li
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Efficiency;
- High Voltage;
- MOSFET;
- Superjunction;
- Trench;
- UIS;
49.95 DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

机译：通过新型沟槽功率MOSFET具有双通道结构的95％DC-DC转换效率，以切割体二极管损耗
- 作者：Haberlen O.;Polzl M.;Schoiswohl J.;Rosch M.;Leomant S.;Nobauer G.;Rieger W.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- DC-DC conversion;
- Silicon trench power MOSFET;
- body diode losses;
- high efficiency;
- low forward voltage drop;
50.Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

机译：P-Ring FS + Trench IGBT概念的实验演示：最小化导通损耗的新设计
- 作者：Antoniou M.;Lophitis N.;Udrea F.;Bauer F.;Nistor I.;Bellini M.;Rahimo M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Insulated Gate Bipolar Transistor (IGBT);
- superjunction power MOSFET;
- technology trade-off;
51.A monolithic SiC drive circuit for SiC Power BJTs

机译：用于SiC Power BJT的单片SIC驱动电路
- 作者：Kargarrazi Saleh;Lanni Luigia;Rusu Ana;Zetterling Carl-Mikael
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Driving Power BJTs;
- Integrated circuits (ICs);
- Silicon Carbide;
52.Study about Si wafer (mother) material for high speed LPT-CSTBT? based on electrical and physical analysis

机译：关于高速LPT-CSTBT的Si晶圆（母）材料的研究？基于电气和物理分析
- 作者：Takano Kazutoyo;Kiyoi Akira;Minato Tadaharu
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- DC current stress;
- Electron Beam irradiation;
- High speed IGBT;
- Lifetime Control;
- Photoluminescence;
53.Lifetime analysis of power modules with new packaging technologies

机译：具有新型包装技术的电源模块的寿命分析
- 作者：Heuck N.;Bayerer R.;Krasel S.;Otto F.;Speckels R.;Guth K.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- copper wire bonding;
- diffusion soldering;
- lifetime model;
- power cycling;
- sintering;
54.Area- and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance

机译：具有低导通电阻5.6 kV SiC BJT工艺的区域和效率优化的结终端
- 作者：Salemi Arash;Elahipanah Hossein;Malm Gunnar;Zetterling Carl-Mikael;Ostling Mikael
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 4H-SiC BJT;
- area-optimized junction termination extension (O-JTE);
- current gain;
- implantation-free;
- on-resistance;
55.Critical overcurrent turn-off close to IGBT current saturation

机译：关键的过电流关断接近IGBT电流饱和度
- 作者：Philippou A.;Jaeger C.;Laven J.G.;Baburske R.;Schulze H.-J.;Pfirsch F.;Niedernostheide F.-J.;Vellei A.;Itani H.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
56.An advanced p-channel LDMOS FET with HTRB tolerability of high-voltage pulse transmitter ICs for ultrasound applications

机译：具有高压脉冲发射器IC的高压P沟道LDMOS FET，用于超声应用的高压脉冲变送器IC
- 作者：Miyoshi Tomoyuki;Wada Shinichiro;Shinomiya Toshio;Ueno Satoshi
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- HTRB;
- RESURF;
- p-channel LDMOS;
57.Next generation 650V CSTBTTM with improved SOA fabricated by an advanced thin wafer technology

机译：下一代650V CSTBT ^{TM 具有通过先进的薄晶片技术制造的改进的SOA}
- 作者：Kamibaba Ryu;Konishi Kazuya;Fukada Yusuke;Narazaki Atsushi;Tarutani Masayoshi
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 650V;
- Advanced thin wafer technology;
- Energy of short circuit;
- LPT-CSTBT;
- SOA;
58.Investigation of anode-side temperature effect in 1200V FWD cosmic ray failure

机译：1200V FWD宇宙射线故障中阳极侧温度效应的研究
- 作者：Mitsuzuka Kaname;Yamada Shoji;Takenoiri Shunji;Otsuki Masahito;Nakagawa Akio
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Cosmic-ray;
- FWDs;
- Failure rate;
- Neutron irradiation;
- Simulation;
- TCAD;
59.70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

机译：70MΩ/ 600V常关GAN晶体管上的SIC和SI基板上
- 作者：Hilt Oliver;Zhytnytska Rimma;Bocker Jan;Bahat-Treidel Eldad;Brunner Frank;Knauer Arne;Dieckerhoff Sibylle;Wurfl Joachim
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- GaN;
- dispersion;
- dynamic on-state resistance;
- normally off;
- self heating;
- switching;
60.GaN transistors — Giving new life to Moore's Law

机译：GaN晶体管 - 为Moore的法律提供新的生活
- 作者：Lidow Alex
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- FET;
- GaN FET;
- MOSFET;
- enhancement mode;
- gallium nitride;
- transistor;
61.22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

机译：22 kV SiC发射器关闭（ETO）晶闸管及其动态性能，包括SOA
- 作者：Xiaoqing Song;Huang Alex Q.;Mengchia Lee;Chang Peng;Lin Cheng;OBrien Heather;Ogunniyi Aderin;Scozzie Charles;Palmour John
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- ETO;
- GTO;
- SOA;
- SiC;
- ultra high voltage;
62.Optimization of HV LDMOS devices accounting for packaging interaction

机译：HV LDMOS器件的优化核算包装交互
- 作者：Arienti G.;Imperiale I.;Reggiani S.;Gnani E.;Gnudi A.;Baccarani G.;Nguyen L.;Hernandez-Luna A.;Huckabee J.;Denison M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- LDMOS device;
- TCAD modeling;
- charge creep;
- packaging material;
63.Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

机译：电导率调制在轴上的4H-SIC 10+ kV引脚二极管
- 作者：Salemi Arash;Elahipanah Hossein;Buono Benedetto;Hallen Anders;Hassan Jawad Ul;Bergman Peder;Malm Gunnar;Zetterling Carl-Mikael;Ostling Mikael
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- OCVD;
- On-axis 4H-SiC;
- PiN diode;
- VF;
- bipolar degradation-free;
- breakdown voltage;
- lifetime enhancement;
- on-resistance;
- ultrahigh-voltage;
64.The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

机译：对称阻塞SiC门关闭（GTO）晶闸管的第一次演示
- 作者：Woongje Sung;Huang Alex Q.;Baliga B.J.;Inhwan Ji;Haotao Ke;Hopkins Douglas C.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 4H-SiC;
- Bevel Dicing;
- Edge Termination;
- GTO;
- Reverse Blocking;
- junction termination extension (JTE);
65.Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

机译：抑制超结MOSFET的电荷不平衡的切换损耗依赖性
- 作者：Yamashita Hiroaki;Ura Hideyuki;Ono Syotaro;Nashiki Masato;Mii Kenji;Saito Wataru;Onodera Jun;Hokomoto Yoshitaka
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- superjunction;
- switching loss;
66.Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

机译：用于克服R A和Q GD 之间的新型沟槽蚀刻双漫反射SIC MOS（TED MOS），用于克服R A和Q
- 作者：Tega Naoki;Yoshimoto Hiroyuki;Hisamoto Digh;Watanabe Naoki;Shimizu Haruka;Sato Shintaroh;Mori Yuki;Ishigaki Takashi;Matsumura Mieko;Konishi Kumiko;Kobayashi Keisuke;Mine Toshiyuki;Akiyama Satoru;Fujita Ryusei;Shima Akio;Shimamoto Yasuhiro
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- DMOS;
- MOS;
- SiC;
- silicon carbide;
- trench;
67.SiC reversely switched dynistor (RSD) for pulse power application

机译：脉冲功率应用的SiC反向切换Dynistor（RSD）
- 作者：Lin Liang;Huang Alex Q.;Cheng Liu;Wenguang Chang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- SiC;
- numerical model;
- pulsed power switch;
- residual voltage;
- reversely switched dynistor(RSD);
68.Self-heating enhanced HCI degradation in pLDMOSFETs

机译：PLDMOSFET中自加热增强HCI降解
- 作者：Yandong He;Ganggang Zhang;Xing Zhang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- HCI degradation;
- MR-DCIV technique;
- device layout;
- self-heating;
69.Simulation studies for avalanche induced short-circuit current crowding of MOSFET-Mode IGBT

机译：雪崩诱导MOSFET-MODE IGBT诱导短路电流拥挤的仿真研究
- 作者：Tanaka Masahiro;Nakagawa Akio
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
70.On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

机译：碳掺杂对650V GaN电力装置动态ron和脱态漏电流的影响
- 作者：Moens P.;Vanmeerbeek P.;Banerjee A.;Guo J.;Liu C.;Coppens P.;Salih A.;Tack M.;Caesar M.;Uren M.J.;Kuball M.;Meneghini M.;Meneghesso G.;Zanoni E.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- AlGaN/GaN;
- Carbon;
- Dynamic Ron;
- HEMT;
- offstate leakage;
71.A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control

机译：一个GaN HEMT驱动IC，具有可编程转换速率和单片负栅极驱动供应和数字电流模式控制
- 作者：Rose M.;Wen Y.;Fernandes R.;Van Otten R.;Bergveld H.J.;Trescases O.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
72.A proposal of LDMOS using Deep Trench poly field plate

机译：使用深沟多场板的LDMOS提案
- 作者：Joowon Park;Kwangsik Ko;Jina Eum;Kuemju Lee;Jungsu Jin;Yeounsoo Kim;Seonghoe Jeong;Sanghyun Lee;Jaehee Lee;Inwook Cho
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- DTFP;
- LDMOS;
- vertical drift region;
73.Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

机译：通常关闭GaN MIS-HEMT，具有改善直流和动态性能的热稳定性
- 作者：Cheng Liu;Hanxing Wang;Shu Yang;Yunyou Lu;Shenghou Liu;Zhikai Tang;Qimeng Jiang;Sen Huang;Chen Kevin J.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- AlGaN/GaN;
- AlN/SiN;
- passivation;
- MIS-HEMT;
- current collapse;
- fluorine plasma implantation;
- gate recess;
- high temperature;
- high voltage;
- normally-off;
74.Expansion of LED lighting and expectations for power semiconductors

机译：扩展LED照明和功率半导体的期望
- 作者：Yamamoto Shohei
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
75.Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs

机译：静态和动态性能表征和15 kV SiC MOSFET的比较和15 kV SiC N-IgBts
- 作者：Gangyao Wang;Huang Alex Q.;Fei Wang;Xiaoqing Song;Xijun Ni;Sei-Hyung Ryu;Grider David;Schupbach Marcelo;Palmour John
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
76.Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

机译：通过从排水管的孔注射使用孔注射，电流折叠操作高达850 V
- 作者：Kaneko Saichiro;Kuroda Masayuki;Yanagihara Manabu;Ikoshi Ayanori;Okita Hideyuki;Morita Tatsuo;Tanaka Kenichiro;Hikita Masahiro;Uemoto Yasuhiro;Takahashi Satoru;Ueda Tetsuzo
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
77.Enhancement-mode GaN-on-Si MOS-FET using Au-free Si process and its operation in PFC system with high-efficiency

机译：增强模式GAN-ON-SI MOS-FET使用AU-FARE SI工艺及其在PFC系统中的高效操作
- 作者：Miyamoto Hironobu;Okamoto Yasuhiro;Kawaguchi Hiroshi;Miura Yoshinao;Nakamura Makoto;Nakayama Tatsuo;Masumoto Ichiro;Miyake Shinichi;Hirai Tomohiro;Fujita Machiko;Ueda Takehiro;Yamanoguchi Katsumi;Tsuboi Atsushi
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- GaN;
- MOSFET;
- PFC circuit;
- enhancement-mode;
78.Reduced active and passive thermal cycling degradation by dynamic active cooling of power modules

机译：通过动态主动冷却电源模块的动态主动冷却减少了主动和被动热循环劣化
- 作者：Xiang Wang;Yun Wang;Castellazzi Alberto
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- cooling;
- power module;
- reliability;
- thermal management;
79.Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

机译：GaN横向极化掺杂超结（LPSJ）的设计与优化：分析研究
- 作者：Bo Song;Mingda Zhu;Zongyang Hu;Nomoto Kazuki;Jena Debdeep;Xing Huili Grace
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Analytical;
- Breakdown voltage;
- GaN;
- Polarization;
- Specfic On resistance;
- Super-junctoin;
80.Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

机译：电阻低，低开关损耗具有较低的部分窄台IGBT的紧凑型建模与分析
- 作者：Miyaoku Yosuke;Matsuura Kai;Saito Atsushi;Kikuchihara Hideyuki;Mattausch Hans Jurgen;Miura-Mattausch Mitiko;Ikoma Daisaku;Yamamoto Takao
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- IGBT;
- compact model;
- injection enhancement PNM-IGBT;
- switching loss;
- switching performance;
81.Superjunction IGBT vs. FS IGBT for 200°C operation

机译：超结IGBT与FS IGBT为200°C操作
- 作者：Hsieh Alice Pei-Shan;Camuso Gianluca;Udrea Florin;Chiu Ng;Yi Tang;Vytla Rajeev Krishna;Ranjan Niraj;Charles Alain
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- 200?C operation;
- Field-Stop IGBT;
- Superjunction;
82.A vertical current regulator diode with trench cathode based on double epitaxial layers for LED lighting

机译：基于双外延层的透射电流调节器二极管，基于双外延层进行LED照明
- 作者：Yitao He;Ming Qiao;Gang Dai;Liangliang Yu;Kang Zhang;Xin Zhao;Jianfeng Ou;Xuqiang Zhu;Zhaoji Li;Yunyang Tang;Bo Zhang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- LED lighting;
- analytical model;
- double epitaxial layers;
- trench cathode;
- vertical current regulator diode;
83.Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA?

机译：1200 V 4H-SIC MOSFET短路SOA ^{的电热仿真 -}
- 作者：Duong T.H.;Ortiz J.M.;Berning D.W.;Hefner A.R.;Ryu S.-H.;Palmour J.W.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- MOSFET;
- SOA;
- electro-thermal simulation;
- model validation;
- short-circuit;
- silicon carbide;
84.A low substrate loss, monolithically integrated power inductor for compact LED drivers

机译：低基板损耗，整体集成功率电感器，用于紧凑型LED驱动器
- 作者：Xiangming Fang;Mak Tsz Him;Yuan Gao;Lau Kei May;Mok Philip K. T.;Sin Johnny K. O.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- LED;
- integrated inductor;
- power converter;
85.Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs

机译：用于高压速率D-MODE GAN-ON-SI HEMTS的准常常压GAN门驱动器
- 作者：Monch S.;Costa M.;Barner A.;Kallfass I.;Reiner R.;Weiss B.;Waltereit P.;Quay R.;Ambacher O.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- HEMTs;
- dc-dc power converters;
- driver circuits;
- gallium nitride;
- integrated circuits;
- power transistors;
86.1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

机译：1700V / 30A 4H-SIC MOSFET具有低切割电压嵌入式二极管和室温硼植入终止
- 作者：Cheng-Tyng Yen;Chien-Chung Hung;Hsiang-Ting Hung;Lurng-Shehng Lee;Chwan-Ying Lee;Tzu-Ming Yang;Yao-Feng Huang;Chi-Yin Cheng;Pei-Ju Chuang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- MOSFET;
- cut-in voltage;
- diode;
- silicon carbide;
87.High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter

机译：高压全SIC电源模块：在KW级转换器中的设备制造，测试和高频应用
- 作者：Sizhe Chen;Junwei He;Kuang Sheng
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- SiC JFET;
- SiC module;
- high frequency;
88.Highly integrated low-inductive power switches using double-etched substrates with through-hole viases

机译：高度集成的低感应电源开关，使用具有通孔通孔的双蚀刻基板
- 作者：Solomon Adane Kassa;Castellazzi Alberto;Delmonte Nicola;Cova Paolo
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Low inductance package;
- double-sided cooling;
- high switching frequency;
- integration;
89.Short-circuit failure mechanism of SiC power MOSFETs

机译：SIC电源MOSFET的短路故障机制
- 作者：Romano G.;Maresca L.;Riccio M.;dAlessandro V.;Breglio G.;Irace A.;Fayyaz A.;Castellazzi A.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Short-Circuit ruggedness;
- Short-circuit failure;
- Silicon Carbide (SiC) Power MOSFET;
- TCAD 2D simulation;
90.Optimization of a high-voltage MOSFET in ultra-thin 14nm FDSOI technology

机译：超薄14nm FDSOI技术中高压MOSFET的优化
- 作者：Litty A.;Ortolland S.;Golanski D.;Cristoloveanu S.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- FDSOI;
- LDMOS;
- back-bias;
- extended-drain;
- high-voltage MOSFET;
- ultra-thin buried oxide;
91.Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

机译：超过1.1 kV击穿低导电电压GaN-on-Si功率二极管，具有错误门控混合阳极
- 作者：Qi Zhou;Yang Jin;Jingyu Mou;Xu Bao;Yijun Shi;Zhaoyang Liu;Jian Li;Wanjun Chen;Chongwen Sun;Bo Zhang
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- GaN;
- diode;
- high breakdown voltage;
- high temperature;
- hybrid anode;
- low turn-on voltage;
92.The boost transistor: A field plate controlled LDMOST

机译：升压晶体管：一个领域板控制的LD
- 作者：Ferrara A.;Heringa A.;Boksteen B.K.;Claes J.;van der Wel A.;Schmitz J.;Hueting R.J.E.;Steeneken P.G.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Power MOSFET;
- RESURF;
- Silicon-on-insulator (SOI);
- field plate;
93.A 0.18μm SOI BCD technology for automotive application

机译：用于汽车应用的0.18μmSIIBCD技术
- 作者：Hao Y.;Sim P.C.;Toner B.;Frank M.;Ackermann M.;Tan A.;Kuniss U.;Kho E.;Doblaski J.;Hee E.G.;Liew M.;Hoelke A.;Wada S.;Oshima T.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
94.Investigation of HCI reliability in interdigitated LDMOS

机译：indigitated LDMOS中HCI可靠性调查
- 作者：Kyuheon Cho;Seonghoon Ko;Machida Fumie;Jaeho Kim;Jaejune Jang;Uihui Kwon;Keun-Ho Lee;Youngkwan Park
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Degradation;
- HCI;
- Interdigitated LDMOS;
- Interface trap density(Nit);
- Si-H bonds;
- TCAD;
- Trap formation kinetics;
95.650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

机译：使用LPCVD-SINX作为钝化和栅极电介质的650V基于650V GaN的MIS-HEMTS
- 作者：Mengyuan Hua;Cheng Liu;Shu Yang;Shenghou Liu;Yunyou Lu;Kai Fu;Zhihua Dong;Yong Cai;Baoshun Zhang;Chen Kevin J.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- MIS-HEMT;
- galicum nitride;
- gate dielectric;
- passivation;
- silicon nitride;
96.60 GHz wireless signal transmitting gate driver for IGBT

机译：60 GHz无线信号传输IGBT的栅极驱动器
- 作者：Yamamoto Kenichi;Ichihara Fumio;Hasegawa Kazunori;Tukuda Masanori;Omura Ichiro
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Gate driver;
- IGBT;
- Signal isolation;
- Wireless;
97.Methods for virtual junction temperature measurement respecting internal semiconductor processes

机译：关于内部半导体工艺的虚拟结温测量方法
- 作者：Herold Christian;Franke Jorg;Bhojani Riteshkumar;Schleicher Andre;Lutz Josef
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
98.How power electronics will reshape to meet the 21st century challenges?

机译：电力电子产品如何重塑，以满足21 ^{ST 世纪挑战？}
- 作者：Gueguen Pierric
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- GaN;
- Power Electronics;
- SiC;
- Wide BandGap;
99.100 V class multiple stepped oxide field plate trench MOSFET (MSO-FP-MOSFET) aimed to ultimate structure realization

机译：100 V类多阶梯式氧化物场板沟槽MOSFET（MSO-FP-MOSFET）旨在实现最终的结构实现
- 作者：Kobayashi Kenya;Nishiguchi Toshifumi;Katoh Shunsuke;Kawano Takahiro;Kawaguchi Yusuke
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
100.Current enhancement by conductivity modulation in diamond JFETs for next generation low-loss power devices

机译：下一代低损耗功率器件的钻石JFET中电导率调制电流增强
- 作者：Iwasaki T.;Kato H.;Yaita J.;Makino T.;Ogura M.;Takeuchi D.;Okushi H.;Yamasaki S.;Hatano M.
- 会议名称：《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》 | 2015年
- Bipolar-mode operation;
- Diamond;
- JFET;