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Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies

机译：步进漂移LDMOSFET：一种用于先进智能电源技术的新型漂移区工程器件

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A novel drift region engineered stepped-drift LDMOSFET device in Freescale''s 0.25μm smart power technology is reported for the first time. The specific on-resistance of the device is 0.33 mΩ.cm²at breakdown voltage of 59 V, the best reported data to date. SOA of the device has been improved up to 87% compared to its conventional counterpart.

机译：首次报告了飞思卡尔0.25μm智能电力技术中的新型漂移区工程阶梯式漂移LDMOSFET器件。该器件的具体导通电阻是0.33mΩ.cm^{2 ^{2 ，在59 v的击穿电压下，最佳报告的数据迄今为止。与其传统的对应相比，该器件的SOA已提高高达87％。}}

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《》|2006年|P.1-4|共4页
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Zhu; R.; Khemka; V.; Bose; A.; Roggenbauer; T.;
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4. Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies [C] . R. Zhu, V. Khemka, A. Bose, IEEE International Symposium on Power Semiconductor Devices and ICs . 2006

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Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies

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