The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors

摘要

A new partial silicon-on-insulator (SOI) formation technology and the associated RF LDMOSFET device structure on a silicon bulk substrate are proposed in this paper. The same technology can also be applied to enhance the quality factor of the integrated on-chip microinductors. The proposed technology is able to reduce both drain/substrate parasitics and leakage current for devices fabricated on bulk substrates. At the same time, the approach overcomes the thermal problem encountered by devices fabricated on full-SOI substrates. To demonstrate the technology, both partial-SOI LDMOSFET and microinductor devices were fabricated on a bulk wafer with their RF performance verified by laboratory measurements.