Single event transients (SETs) in a 100 series 0.18 µm partially-depleted silicon-on-insulator (PDSOI) complemen-tary metal oxide semiconductor (CMOS) inverter chain are studied by using pulsed laser. In this paper, effects of struck transistor type and struck locations on the threshold laser energy and the pulse width of SETs are investigated. Results show that the threshold laser energies at different locations are similar, but the threshold laser energies of n-channel metal-oxide-semiconductor (NMOS) transistors are much smaller than that of p-channel metal-oxide-semiconductor (PMOS) transistors. The SET pulse width of n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) is 427.5 ps as measured at the output terminal when the 2nd stage is irradiated, and 287.4 ps when the 100th stage is irradiated; the SET pulse width of p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is 295.9 ps as measured at the output terminal when the 1st stage is irradiated, and 150.5 ps when the 99th stage is irradiated. Both broadening rates are about 1.4 ps/stage. When the struck locations are close to the output terminal of the chain, the SET pulse is narrowed;however, when the struck nodes are close to the input terminal, the SET pulse is broadened. SET pulses are progressively broadened up when propagating is along inverter chains. A similar broadening rate in neither NMOSFET nor PMOSFET, indicates that the SET pulse broadening effect is caused by propagation, independent of the type of struck transistors. Through analysis, the charge of floating body-induced threshold voltage hysteresis in PDSOI transistors is the main cause of pulse broadening. The positive SET pulse observed on the oscilloscope, contrary to the expectation, is due to charging and discharging of the output node capacitor. Also, the observed sub-rail-to-rail swings of the SET pulses are due to the voltage division between the internal resistance of the oscilloscope and the resistance of the PMOS transistor.
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