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Impact of On-Chip Interconnect on the Performance of 3-D Integrated Circuits With Through Silicon Vias: Part I

机译:片上互连对通过硅通孔的3D集成电路性能的影响:第一部分

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Circuit-level models are developed to determine the upper bound on the performance of a 3-D IC link with through silicon vias (TSVs). It is shown that the performance of a 3-D link is limited not only by the on-chip interconnect RC, driver resistance, and TSV capacitance, but also by the current carrying capacity of the on-chip wires connecting the TSV to the input/output (I/O) driver. The models developed in this paper are used to optimize the I/O driver size, the number of on-chip wires connecting the TSV to the driver, and the data-rate to maximize the aggregate bandwidth per unit energy. Furthermore, in order to maximize the aggregate bandwidth of a 3-D link, it is shown that splitting the TSV array into smaller subarrays and placing the I/O drivers closer to the TSVs is better compared with having large TSV arrays.
机译:开发了电路级模型来确定具有硅通孔(TSV)的3-D IC链路性能的上限。结果表明,3-D链路的性能不仅受到片上互连RC,驱动器电阻和TSV电容的限制,而且还受到将TSV连接到输入的片上导线的载流能力的限制/ output(I / O)驱动程序。本文开发的模型用于优化I / O驱动器尺寸,将TSV连接到驱动器的片上线数以及数据速率,以最大程度地提高单位能量的总带宽。此外,为了最大化3-D链路的总带宽,已显示出与具有较大的TSV阵列相比,将TSV阵列拆分为较小的子阵列并将I / O驱动器放置得更靠近TSV更好。

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