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On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits.

机译:在3-D集成电路中通过硅通孔(TSV)互连进行信令传输时。

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摘要

This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted.
机译:本文讨论了3D集成电路(IC)中硅直通(TSV)互连的信号完整性(SI)问题和信令技术。在Spice仿真中,采用了场求解器提取的TSV寄生效应,以研究每种寄生成分对性能指标(如延迟和串扰)的影响,并确定捕获所有相关影响的降阶电模型。我们表明,在密集的TSV结构中,电压模式(VM)信号无法实现高数据速率,而电流模式(CM)信号对于高吞吐量信号以及降低抖动更有效。提取不同信令模式下的数据速率,能耗和耦合噪声。

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