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An Effective Approach for Thermal Performance Analysis of 3-D Integrated Circuits With Through-Silicon Vias

机译:具有硅通孔的3D集成电路热性能分析的有效方法

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摘要

To investigate the thermal behavior of 3-D integrated circuits, long computational times are required for large-scale stacked chips with a complicated structure. In this paper, an equivalent anisotropic thermal model is introduced to reduce the computational time resulting from complicated numerical integration. By introducing the equivalent model, the complex nature of the through-silicon via (TSV) structure can be overcome. Our algorithm not only considers the anisotropic structure of the TSV and the orientation of the heat flux, but also considers the influence of the thermal coupling between TSVs. The finite-element method solver COMSOL is used for comparison with the proposed model, revealing a good agreement between the results of the simulation and the proposed models. The maximum deviation is less than 5%, indicating the accuracy of the proposed model, and the computational time of our model is reduced by 95.5%. In addition, parametric studies and studies of the structure are performed in order to further verify the accuracy of the proposed method and understand the main factors affecting the thermal behavior of a stacked 3-D chip.
机译:为了研究3-D集成电路的热行为,具有复杂结构的大规模堆叠芯片需要较长的计算时间。本文引入了等效各向异性热模型,以减少复杂的数值积分所导致的计算时间。通过引入等效模型,可以克服硅通孔(TSV)结构的复杂性。我们的算法不仅考虑了TSV的各向异性结构和热通量的方向,还考虑了TSV之间热耦合的影响。使用有限元方法求解器COMSOL与所提出的模型进行比较,揭示了仿真结果与所提出的模型之间的良好一致性。最大偏差小于5%,表明所提出模型的准确性,并且我们的模型的计算时间减少了95.5%。此外,进行了参数研究和结构研究,以进一步验证所提出方法的准确性,并了解影响堆叠3-D芯片热行为的主要因素。

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