机译:使用AlGaN / GaN / AlGaN双异质结构抑制增强模式基于GaN的HEMT中的电流崩塌
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;
DH-HEMTs; Logic gates; MODFETs; Stress; Aluminum gallium nitride; Wide band gap semiconductors;
机译:用不同GaN沟道层厚度对增强型AlGaN / GaN / AlGaN / AlGan双异质结构HEMT的影响
机译:常关型AlGaN / GaN HEMT中高电阻GaN盖层的击穿增强和电流崩塌抑制
机译:结合极性和非极性AlGaN / GaN异质结构的沟槽型沟道增强型AlGaN / GaN MIS HEMT
机译:单(AlGaN / GaN)和双(AlGaN / GaN / AlGaN)异质增强模式Hemts的研究
机译:为改善AlGaN / GaN MOS-HFET中的阈值电压稳定性和电流崩塌抑制而研究ALD介电材料的研究。
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:在静水压力下具有变化的AlGaN厚度和成分的GaN / AlGaN / GaN双异质结构的电流与电压特性
机译:用于减少alGaN / GaN高电子迁移率晶体管(HEmT)中电流崩塌的表面钝化膜的比较