Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

著录项

• 来源
  《中国物理：英文版》 |2016年第8期|340-346|共7页
• 作者

  Xiao-Ling Duan; Jin-Cheng Zhang; Ming Xiao; Yi Zhao; Jing Ning; Yue Hao;

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• 作者单位

  Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;

  Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;

  Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;

  Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;

  Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;

  Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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