Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs

摘要

The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic emission is the main mechanism of the gate current in forward bias operation while hopping transport component is the main mechanism of gate current in reverse bias operation. This newly developed gate current model was implemented in Verilog-A. A good agreement between the simulations and experimental data demonstrates the accuracy of the model.