A Novel IGBT With High- k Dielectric Modulation Achieving Ultralow Turn-Off Loss

摘要

A novel insulated gate bipolar transistor modulated by a high-k dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during the turn-off transient. This merit greatly reduces the current varying time of an HK-IGBT. Moreover, HK-IGBT can obtain a better electric field distribution, which enables the carrier stored layer (CSL) to have a higher doping dose when compared to a typical carrier stored trench gate bipolar transistor (CSTBT). These advantages improve the relationship between the static and transient power losses. According to the simulation results, HK-IGBT obtains a 66% lower turn-off loss than that of a field stop (FS) IGBT with the same ON-state voltage. Moreover, by using a CSL, the performance of an HK-IGBT can be comparable with that of a super-junction IGBT (SJ-IGBT).