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Dielectric material having a low dielectric loss factor for high- frequency use

机译:用于高频的介电损耗因子低的介电材料

摘要

A dielectric material having a low dielectric loss factor for high- frequency use, which comprises a sintered product of silicon nitride chiefly composed of silicon nitride and containing at least oxygen as an impurity component or oxygen as an impurity component and a compound of an element of the Group 3a of periodic table, wherein said sintered product contains aluminum in an amount which is not larger than 2% by weight reckoned as an oxide thereof having relative densities of not smaller than 97% and has a dielectric loss factor at 10 GHz ofnot larger than 5×10.sup.-4. The dielectric material has excellent mechanical properties such as large strength and excellent chemical stability, features small dielectric loss factor in high-frequency regions, and is suited for use as a material for high-frequency oscillators, antennas, filters and electronic circuit boards. In particular, those dielectric materials are suited for use as window materials for introducing high frequencies in a high-frequency plasma- generating CVD apparatus, a microwave wave output unit and an oscillator.
机译:一种用于高频的介电损耗因子低的介电材料,其包括主要由氮化硅构成并且至少包含氧作为杂质组分或氧作为杂质组分和元素的化合物的氮化硅的烧结产物。元素周期表第3a族,其中所述烧结产物包含不大于2重量%的铝(按其氧化物计),其相对密度不小于97%且在10 GHz下的介电损耗因子不大于比5×10.-4。该介电材料具有优异的机械性能,如高强度和出色的化学稳定性,在高频区域具有较小的介电损耗因子,并且适合用作高频振荡器,天线,滤波器和电子电路板的材料。特别地,那些介电材料适合用作在高频等离子体产生CVD设备,微波输出单元和振荡器中引入高频的窗口材料。

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