A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

摘要

A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under E_off of 8mJ/cm², the VCE(sat) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.