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Method for reducing conduction loss of IGBT for converting voltage modulation of inverter

机译:降低逆变器电压调制转换的IGBT的导通损耗的方法

摘要

PURPOSE: A method is provided to minimize the conduction loss of the IGBT(Insulated Gate Bipolar Transistor) by selecting a sinusoidal pulse width modulation or a space vector pulse width modulation.;CONSTITUTION: A voltage modulation index and a power factor of an inverter are calculated(10). The difference value between the conduction loss of the IGBT due to the space vector pulse width modulation and the conduction loss of the IGBT due to the sinusoidal pulse width modulation is calculated by using the voltage modulation index and the power factor(20,30). If the calculated difference value is greater than 0, the space vector pulse width modulation is selected. If the calculated difference value is less than or equal to 0, the sinusoidal pulse modulation is selected.;COPYRIGHT KIPO 2010
机译:目的:提供一种通过选择正弦脉冲宽度调制或空间矢量脉冲宽度调制来最小化IGBT(绝缘栅双极晶体管)的传导损耗的方法。组成:逆变器的电压调制指数和功率因数是计算(10)。利用电压调制指数和功率因数计算出空间矢量脉宽调制引起的IGBT导通损耗与正弦波脉宽调制引起的IGBT导通损耗之间的差值(20,30)。如果计算出的差值大于0,则选择空间矢量脉冲宽度调制。如果计算出的差值小于或等于0,则选择正弦脉冲调制。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR101326494B1

    专利类型

  • 公开/公告日2013-11-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080110196

  • 发明设计人 김성도;이현동;

    申请日2008-11-07

  • 分类号H02M7/497;H02M7/525;

  • 国家 KR

  • 入库时间 2022-08-21 16:24:12

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