Heterojunction InAlAs/InP MESFETs grown by OMVPE

摘要

Lattice-matched InAlAs-InP and InAlAs/sup +/-InP heterostructure MESFETs with extrinsic transconductances of 220 and 155 mS/mm, respectively, have been fabricated on semi-insulating InP substrates. Maximum stable gains of 11.5 dB for the 1.25- mu m-gate n-InP channel and 10 dB for the 1.0- mu m-gate n/sup +/-InP channel devices were measured at 10 GHz. An extrapolated f/sub max/ of 42 GHz was obtained for the n/sup +/-channel MESFET.