Kink Effect in Submicrometer-Gate MBE-Grown InAlAs/InGaAs Heterojunction MESFET's.

摘要

We report the influence of the kink effect on the dc and microwave performance of i-InAlAs/n(+)-InGaAs/i-heterojunction doped-channel MESFET's lattice matched to an InP substrate with submicrometer gates. Kink effects were observed at room temperature as well as at 77 K in the dc measurement. The kinks seem to be related to deep-level electron trapping, and are not present at microwave frequencies. The existence of kinks at low operating frequencies does not seem to degrade the microwave performance of the devices as can be seen from the measured results. Reprints. (RRH)