OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBE

摘要

The current-gain cutoff frequency (f/sub T/) performances of InAlAs/InGaAs/InP MODFETs on OMVPE-grown heterostructures and MBE-grown heterostructures are compared. InAlAs/InGaAs/InP MODFETs on OMVPE-grown heterostructures were fabricated with different gate lengths from 2.5 to 0.27 mu m. An effective electron saturation velocity of 2.0*10/sup 7/ cm/s is deduced from an f/sub T/*L/sub g/ product of 32 GHz- mu m. An extrinsic DC transconductance as high as 1020 mS/mm and an f/sub T/ of over 114 GHz at room temperature were achieved for 0.27- mu m gate-length MODFETs. It is shown that the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFETs on heterostructures grown by MBE.