Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

摘要

Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can be grown using either molecular-beam epitaxy or metalorganic chemical vapor deposition. These photodiodes display broad spectral responses up to wavelengths greater than or approximately equal to 10 mu m, and detectivities of 1*10/sup 9/ cm-Hz/sup 1/2//W at 10 mu m.