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Development of infrared detectors based on Type II, InAsSb strained-layer superlattices

机译：基于II型Inassb应变层超晶格的红外探测器的开发

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An overview is provided of long wavelength, photovoltaic detectors constructed with Type II (also known as ''staggered''), III-V superlattices. Specifically, the electronic properties of InAsSb strained-layer superlattices and prototype detectors utilizing these structures are described. 12 refs., 5 figs.

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Kurtz, S. R.;
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年度 1990
页码 1-19
总页数 19
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Indium Antimonides ; Infrared Radiation ; Photodiodes ; Arsenic Compounds ; Semiconductor Materials ; Absorption Spectra ; Detection ; Electrical Properties ; Optical Properties ; Strains ; Superlattices ; Meetings;

机译：锑化铟;红外辐射;光电二极管;砷化合物;半导体材料;吸收光谱;检测;电学性质;光学性质;应变;超晶格;会议;

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专利

1. Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors [J] . Ting David Z., Soibel Alexander, Khoshakhlagh Arezou, Journal of Electronic Materials . 2019,第10期

机译：INAS / INASSB II型应变层超晶格单极屏障红外探测器的开发
2. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs [J] . Keen J. A., Lane D., Kesaria M., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第7期

机译：用于中红外LED的INAS / INASSB Type-II紧张层超晶格
3. Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate [J] . Durlin Q., Perez J. P., Cerutti L., Infrared physics and technology . 2019,第期

机译：基于Si衬底的分子束外延生长的基于GA-Fair Inas / Inassb Type-II超晶格的中空屏障探测器
4. Prototype InAsSb strained-layer superlattice photovoltaic and photoconductive infrared detectors [C] . Kurtz, S.R., Dawson, . 1988

机译：原型InAsSb应变层超晶格光伏和光电导红外探测器
5. Transport in Mid-Wavelength Infrared (MWIR) p- and n-Type InAsSb and InAs/InAsSb Type-II Strained Layer Superlattices (T2SLs) for Infrared Detection [D] . Casias, Lilian K. 2019

机译：在中波长红外线（MWIR）P-and N型INASSB和INAS / INASSB Type-II紧张层超大图格（T2SL）用于红外检测
6. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation [O] . Gamini Ariyawansa, Joshua Duran, Charles Reyner, 2019

机译：用于高温操作的InAs / InAsSb应变层超晶格中波红外探测器
7. Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters [O] . Biefeld, R.M., Follstaedt, D.M., Kurtz, S.R., 1995

机译：通过mOCVD生长的Inassb / InGaas应变层超晶格中的界面，用于红外发射器
8. Development of infrared detectors based on Type II, InAsSb strained-layer superlattices. [R] . Kurtz, S. R. 1990

机译：基于II型Inassb应变层超晶格的红外探测器的开发。

Development of infrared detectors based on Type II, InAsSb strained-layer superlattices

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