Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

摘要

A high gain photoconductive device for 8 to 12 &mgr;m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained- layer superlattice of alternating layers of two different InAs.sub.1-x Sb. sub.x compounds having x 0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 &mgr;m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.