Prototype InAsSb strained-layer superlattice photovoltaic and photoconductive infrared detectors

摘要

Prototype infrared detectors using InAs/sub 1-x/Sb/sub x/ (x<0.8) strained-layer superlattices are described. Photovoltaic detectors have been constructed with long-wavelength responses extending out to 10.4 mu m and detectivities within an order of magnitude of commercial HgCdTe detectors. A photoconductive detector based on a novel four-layer-per-period superlattice displayed gain values as high as 90 due to suppressed recombination in the type II superlattice.