A model for AC hot-carrier degradation in n-channel MOSFETs

摘要

A recently developed model for AC hot-carrier lifetimes is shown to be valid for typical and worst-case stress waveforms found in CMOS circuits. Three hot-carrier damage mechanisms are incorporated into the model: interface states created at low and medium gate voltages, oxide electron traps created at low gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under inverterlike AC stress. No transient effects are required to explain AC stress results, at least for frequencies up to 1 MKz.