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Formation of silicon reentrant cavity heat sinks using anisotropic etching and direct wafer bonding

机译:利用各向异性蚀刻和直接晶圆键合形成硅凹腔散热片

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A novel silicon reentrant cavity heat sink for enhanced liquid cooling of silicon multichip substances has been fabricated using a two-step anisotropic etching process followed by silicon direct wafer bonding. Cavity mouth openings ranging from 8 to 500 mu m have been batch fabricated with the two-step process. The reentrant cavities suppress the temperature overshoot normally associated with the transition between the free convection and nucleate boiling regimes of liquid immersion cooling. Nucleate boiling has been observed to occur at heater fluxes below 2 W/cm/sup 2/ for both increasing and decreasing heat flux conditions. Specific thermal contact resistances (heater fluid) of less than 0.6 K-cm/sup 2//W have been measured in Freon-22, R-113, and FC-72.
机译:使用两步各向异性刻蚀工艺,然后进行硅直接晶圆键合,制造了一种新型的硅凹腔散热片,用于增强硅多芯片物质的液体冷却。分两步工艺批量制造了8至500微米的腔口。凹腔可抑制温度过高,通常与液体浸没冷却的自由对流和成核沸腾状态之间的过渡有关。对于增加和减少的热通量条件,已经观察到在低于2 W / cm / sup 2 /的加热器通量下会发生核沸腾。在Freon-22,R-113和FC-72中测得的比热接触电阻(加热流体)小于0.6 K-cm / sup 2 // W。

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