High-Efficiency AlInGaP Visible Vertical Cavity Surface- Emitting LasersIncorporating Wafer Fusion and Improved Heat Sinking. Phase 1

摘要

Red vertical cavity surface emitting lasers (VCSELs) using aluminum indiumgallium phosphide (AlInGaP) based active regions are limited in performance by thermally activated carrier leakage, and absorption in aluminum gallium arsenide mirrors. This program seeks to improve performance by flip-chip bonding for better heat sinking. This requires wafer fusion to gallium phosphide substrates. We also improve device efficiency by lateral oxidation. Lastly, we investigate alternative mirror combinations which are transparent to shorter wavelengths.