Effect of Moving Velocity of the Heat Source on Bonding Strength in the Direct Silicon Wafer Bonding Using Linear Annealing Method

摘要

A linear annealing method was utilized to make a direct wafer bonding of 10 cm Si wafers for a SOI application. In the linear annealing method, a halogen lamp moves with a constant velocity above silicon wafer pair bonded with hydrogen bonding. In order to optimize the processing parameters such as initial heat treatment time and moving velocity bonding strengths were measured when the moving velocity varies in the range of 0.05 approx 0.5 mm/s and these results were compared with numerical calculation using finite difference method. The bonding strength from the high speed anneal (0.5 mm/s) showed a similar strength as that from the slow speed (0.05 mm/s) process and this result agrees with the numerical calculation. Based on the present study, it is expected that the process speed can be increased as high as 200 sec/wafer without decreasing the bonding strength.