A new Insulated-Gate Thyristor structure with turn-off achieved by controlling the base-resistance

摘要

A new Insulated-Gate Thyristor (IGTH) design for achieving high controllable current capability is described. The design consists of square cells with high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. The diagonal regions between the square cells is used as the turn-on regions while the other regions under the MOS gate between the cell diffusions are connected by P/sup -/ diffusion to obtain a MOS-gate controlled low resistance path for turn-off. The IGTH was fabricated using a double-diffused DMOS process and 1200 V devices with controllable currents in excess of 150 A was obtained.